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Piezoelectric AlN and AlScN thin films for communication applications (SAW/BAW filters, PIC)

Listing Description

This technology provides high-quality AlN and AlScN piezoelectric thin films deposited via reactive magnetron sputtering. The films are optimized for strong piezoelectric performance and uniformity over large areas. The offering includes layer stack deposition with metal and isolation layers, making it suitable for SAW/BAW filters and photonic integrated circuits (PIC). The process is scalable and supported by comprehensive film characterization, enabling reliable integration into advanced communication and electronic systems.

Offer Details

Specifications and Deliverables:

• Optimized AlScN composition with high Sc content for enhanced d33 piezoelectric coefficient
• High c-axis orientation for superior film performance
• Film thickness ranging from a few nanometers to several tens of micrometers
• Deposition rates up to 3 nm/s for efficient processing
• Low surface roughness and effective stress management
• Compatibility with a wide range of substrates and film stacks
• Custom adaptation of film and layer stack properties
• Film deposition services and feasibility studies
• Deposition recipes and wafer-scale process data
• Advanced analytics (XRD, AFM, PFM, SEM, ellipsometry)
• Test reports and sample depositions

Value Proposition:

• High-performance AlScN films with enhanced piezoelectric properties for advanced communication devices
• CMOS-compatible integration enabling seamless incorporation into existing semiconductor processes
• Highly oriented films with low surface roughness for improved device performance
• Scalable sputter deposition technology suitable for industrial applications
• Tailored material properties to meet next-generation RF and photonic system requirements

Input Required from Customer:

• Target application (e.g., SAW/BAW filters, PIC, MEMS devices)
• Required film properties (thickness, piezoelectric performance, orientation)
• Substrate type and compatibility requirements
• Design specifications or device architecture
• Process integration constraints and CMOS compatibility needs
• Volume and scale of production (prototype or industrial scale)

Fields of Application:

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Adress:

Winterbergstraße 28
Dresden
Saxony
01277
Germany

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