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Sustainable Epitaxy for III-V Semiconductors: GaN/AlN Magnetron Sputter Epitaxy for Power Electronics and Ultra-Wide Bandgap Applications

Listing Description

This technology enables the growth of high-quality GaN and AlN epitaxial layers using magnetron sputter epitaxy on silicon and sapphire substrates. It offers optimized crystallinity, surface morphology, and precise polarity control (Al-polar vs N-polar) for AlN layers. Designed for advanced semiconductor applications, it supports power electronics such as HEMTs and diodes, ultra-wide bandgap (UWBG) devices, GaN-on-Si templates, and photonic systems. The process includes inline integration, scalable deposition, and comprehensive film characterization for reliable and efficient device fabrication.

Offer Details

Specifications and Deliverables:

• GaN and AlN epitaxial layers with controlled polarity via seed/template engineering
• High c-axis orientation for enhanced material properties
• Film thickness ranging from 50 nm to 2 µm
• Surface roughness below 0.5 nm RMS for high-quality interfaces
• Defect density below 1e9 cm^-2 for improved device performance
• Lattice and strain control for optimized epitaxial growth
• Deposition recipes and wafer-scale process data
• Advanced characterization reports (XRD, TEM, AFM)
• QA certification and test wafers
• Process window maps and integration guidelines

Value Proposition:

• High crystalline quality GaN and AlN epitaxial layers for advanced semiconductor performance
• Precise polarity control enabling optimized device characteristics
• Low defect density for improved efficiency and reliability
• CMOS-compatible processing for seamless integration into existing manufacturing lines
• Scalable sputter epitaxy approach supporting industrial production and UWBG device development

Input Required from Customer:

• Target application (e.g., power electronics, RF devices, photonics)
• Substrate type and specifications (Si, sapphire, etc.)
• Required epitaxial layer properties (thickness, polarity, defect density)
• Device design and integration constraints
• Performance and reliability targets
• Production scale (R&D, pilot, or mass production)

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Adress:

Winterbergstraße 28
Dresden
Saxony
01277
Germany

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