The Power2Power project, funded by the German Federal Ministry of Education and Research under grant number 16ESE0397S and co‑financed by the Saxon state budget, aimed to advance high‑temperature power‑semiconductor technology and its integration into efficient manufacturing and logistics chains. Over the course of the project, the Technical University of Dresden contributed through its Professorships of Technical Logistics and Power Electronics, while partners such as X‑FAB Dresden, X‑FAB Erfurt, the University of Chemnitz, the University of Bremen, the University of Paderborn, and the University of Rostock supplied expertise in wafer fabrication, device testing, and industrial deployment. The consortium also included industry players who provided test equipment and production facilities, ensuring that research outcomes could be translated into commercial solutions.

Technically, the project focused on the design, simulation, and experimental validation of insulated‑gate bipolar transistor (IGBT) modules capable of operating with a junction temperature up to 200 °C. Thermal simulations performed with PrimePack 3+ demonstrated that a DC‑input of 900 V and a junction temperature of 150 °C could be maintained while keeping the packaging temperature below 50 °C. Experimental measurements on the ACS880 inverter demonstrator confirmed these predictions, showing that the IGBT and diode blocking layers could withstand a short‑time overload of 150 % of the nominal current without exceeding the 200 °C limit. Switching‑loss measurements across a range of load currents revealed that the new modules exhibited lower conduction losses compared to first‑generation devices, while the rise in blocking temperature did not significantly increase switching losses. Transient thermal impedance tests further confirmed that the modules maintained acceptable temperature rises during rapid switching events, supporting their suitability for high‑frequency applications.

The project also produced a life‑cycle cost model that quantified the economic benefits of the higher temperature capability. By reducing the need for active cooling and allowing for tighter integration of power modules, the model projected a cost reduction of up to 15 % over the device lifetime for typical inverter applications. Additionally, the consortium developed a semantic‑web‑based supply‑chain model that mitigated bullwhip effects and improved forecasting accuracy, thereby enhancing the robustness of the entire value chain from wafer fabrication to end‑use deployment.

In terms of logistics, the TU Dresden team automated the packaging and unpackaging of wafer transport carriers, achieving a higher throughput and reduced handling time. The demonstrator inverter, built in collaboration with X‑FAB and the universities, incorporated the new IGBT modules and showcased the practical benefits of the technology in a real‑world setting. The final report, published in 2025, documents the experimental results, simulation data, and economic analyses that collectively demonstrate the readiness of the technology for commercial deployment.

Overall, the Power2Power consortium delivered a suite of high‑temperature IGBT modules, validated through rigorous testing and simulation, and integrated them into a demonstrator inverter that proved their suitability for next‑generation electric mobility and renewable‑energy applications. The collaborative effort, spanning academia and industry, ensured that the developed technologies could be rapidly adopted within the German semiconductor ecosystem, strengthening Europe’s position in the global power‑electronics market.